Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors
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Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs
The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...
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1. Introduction The surface trap of AlGaN/GaN high electron mobility transistors (HEMTs) can cause current collapse phenomenon which is the most serious limiting factor of the device's output power at high frequency operation. The surface passivation is a key step to reduce surface state effects and the quality of surface passivation film is very important [1]. Silicon nitride (SiNX) is widely ...
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In this work, silicon nitride thin films have been deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on both silicon samples and AlGaN/GaN High Electron Mobility Transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been ...
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We applied a new Migration Enhanced Metalorganic Chemical Vapor Deposition (MEMOCVD) epitaxial technique for growing AlN/GaN/InN epitaxial films and heterostructure layers on 2”, 3” and 4” substrates. The growth of the AlN/GaN/InN layers was carried out using controlled precursor pulsed flows to achieve accurate thickness control over large area substrates. This technique bridges the gap betwee...
متن کاملAlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is pr...
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